ISSP2013: Symposium Program

Wednesday July 10: Oral session
Science Hall 10:00 - 17:00

[ Welcome Address ]

10:00 Motofumi Suzuki, The Vacuum Society of Japan, Kyoto University, Japan

10:10 Takeo Nakano, Chair, ISSP2013 Committee, Seikei University, Japan

[ Opening Session ]

10:20 KN-1 Plasma assisted PVD: The past and the present, A. Matthews*, The University of Sheffield, UK (keynote)

11:00 OP-1 Reactive magnetron sputtering: from fundamentals to high deposition rate processes, T. Kubart*, Uppsala University, Sweden (invited)

11:40 OP-2 Model calculation of dynamic mass-balance changes in reactive sputtering, E. Kusano*, Kanazawa Institute of Technology, Japan

12:00-13:00 LUNCH BREAK

[ Sputtering Processes I ]

13:00 SP 1-1 Hard nanocomposite coatings with unique properties prepared by reactive magnetron sputtering., J. Musil*, University of West Bohemia, Czech Republic

13:20 SP 1-2 Unlocking the potential of voltage control for high rate zirconium and hafnium oxide deposition by reactive magnetron sputtering, M. Audronis¹⁾*, K. Juskevicius²⁾, R. Drazdys²⁾, A. Matthews¹⁾, 1) The University of Sheffield, UK, 2) Center for Physical Sciences and Technology, Lithuania

13:40 SP 1-3 Impact of the use of Xe and its recycling system for preparing amorphous InGaZnO thin film transistors by dual-target rotation magnet sputtering, T. Goto*, H. Ishii, S. Sugawa, T. Ohmi, Tohoku University, Japan

14:00 SP 1-4 The fabrication and property evaluation of Ti-Zr-B thin film metallic glass materials, Y.-L. Deng*, J.-W. Lee, Ming Chi University of Technology, Taiwan

14:20 SP 1-5 HIPIMS, Innovation in coating development, J. Alami*, INI Coatings ltd., Germany (invited)

15:00 -15:20 COFFEE BREAK

[ Applications ]

15:20 AP-1 Deposition and characterization of TiAlN coatings prepared by high power impulse magnetron sputtering, T. Sasaki, S. B. Abusuilik*, K. Inoue, Hitachi Tool Engineering, Ltd., Japan

15:40 AP-2 Investigation of a sterilization system using active oxygen species from oxygen gas generated by ultraviolet irradiation, K. Yoshino^1,3)*, H. Matsumoto¹⁾, T. Iwasaki¹⁾, S. Kinoshita¹⁾, K. Noda²⁾, K. Oya³⁾, S. Iwamori³⁾, 1) Iwasaki Electric Co., Ltd., Japan, 2) AIST, Japan, 3) Tokai University, Japan

16:00 AP-3 Comparison between MF-AC and DC technologies for rotary ITO sputtering: coating cost and properties, D. Chiu*, P. Lippens, Umicore Thin Film Products, Taiwan

16:20 AP-4 Enabling next generation touch screen panels by state-of-the-art deposition technology and platforms, M. Bender*, A. Hellmich, T. Zilbauer, Applied Materials GmbH & Co. KG, Germany

Wednesday July 10: Poster session
Atrium 17:20 - 19:00
(with Drinks and Light Meals)

[ Posters from Oral Sessions ]

[Opening Session] KN-1, OP-1, OP-2

[Sputtering Processes I] SP1-1, SP1-2, SP1-3, SP1-4, SP1-5

[Applications] AP-1, AP-2, AP-3, AP-4

[ Sputtering Processes: POSTER I ]

SP P1-1 Cu embedding in co-lined trenches by high-vacuum magnetron sputtering in N₂-added Ar gas, H. Iida*, M. Itoh, Y. Uhara, S. Saito, Tokyo University of Science, Japan

SP P1-2 Irradiation effects of acetone cluster ion beam on polymer surfaces, H. Ryuto*, Y. Kakumoto, M. Takeuchi, G. H. Takaoka, Kyoto University, Japan

SP P1-3 Surface morphology improvement of Cu substrate by photoemission-assisted Ar⁺ ion beam and fast Ar⁰ atom beam, S. Ajia*, Y. Ohtomo, S. Ogawa, Y. Takakuwa, Tohoku University, Japan

SP P1-4 Effects of magnetic flux density and substrate bias voltage on Ni films prepared on the flexible material substrate using unbalanced magnetron sputtering assisted by inductively coupled plasma, T. Koda*, H. Toyota, Hiroshima Institute of Technology, Japan

SP P1-5 Characteristics and mechanical properties of TiN/WN multilayer deposited using DC and pulse DC magnetron sputtering, W.-Y. Wu^1,2), T.-H. Chiou¹⁾, P.-H. Chen²⁾, W.-C. Chen²⁾, C.-L. Chang^1,2)*, 1) Department of Materials Science and Engineering, MingDao University, Taiwan, 2) Surface Engineering Research Center, MingDao University, Taiwan

[ Thin Films: POSTER I ]

TF P1-1 Growth of GaInN films on silicon substrates by reactive sputtering, Q. Guo*, T. Nakao, T. Ushijima, K. Saito, T. Tanaka, M. Nishio, Saga University, Japan

TF P1-2 Colorful hard coatings with AlN-TiN multilayer structures, J. H. Lu^1,2)*, B. Y. Chen¹⁾, 1) Department of Materials Engineering, Ming Chi University of Technology, Taiwan, 2) Center for Thin Film Technologies and Applications, Ming Chi University of Technology, Taiwan

TF P1-3 An effect of interfacial copper layer on the adhesion and tribological properties of sputtered fluorocarbon thin film deposited onto polyimide film substrate, S. Seino*, K. Arai, S. Sasaki, Y. Satoh, S. Iwamori, Tokai university, Japan

TF P1-4 An effect of surface roughness of fluorocarbon thin films deposited onto polyester (PET) film substrate prepared by an r.f. sputtering on the haze of the film, S. Sasaki*, S. Seino, S. Iwamori, Tokai university, Japan

TF P1-5 Hybrid orientation selective epitaxial growth of CeO₂(100) and (110) regions on Si(100) substrates, T. Inoue*, S. Shida, Iwaki Meisei University, Japan

TF P1-6 Mechanism of film hardening of hydrogenated amorphous silicon carbide films fabricated by the decomposition of tetramethylsilane with the microwave discharge flow of Ar, H. Ito¹⁾*, T. Ohgaki¹⁾, H. Akasaka^1,2), H. Saitoh¹⁾, 1) Nagaoka University of Technology, Japan, 2) Tokyo Institute of Technology, Japan

TF P1-7 Effect of electrode on the electrical performance of TaO_x layer by use of low temperature plasma oxidation, P.-S. Chen¹⁾*, Y.-S. Chen²⁾, H.-Y. Lee²⁾, W. S. Chen²⁾, 1) MingShin University of Science and Technology, Taiwan, 2) National Tsing Hua University, Taiwan

TF P1-8 Epitaxial Co-rich Co-Pt films with granular grains and high perpendicular magnetic properties, S. C. Chen¹⁾, C. D. Chen¹⁾*, C. K. Wen¹⁾, T. H. Sun²⁾, S. T. Chen³⁾, P. C. Kuo³⁾, 1) Ming Chi University of Technology, Taiwan, 2) National Tsing Hua University, Taiwan, 3) National Taiwan University, Taiwan

TF P1-9 Surface nanolayers for thermally stable Ag thin films, Y. Kudo*, Z. Zhang, M. Kawamura, Y. Abe, K. H. Kim, Kitami Institute of Technology, Japan

TF P1-10 A study on atmospheric pressure plasma assisted selenium deposition process for CIGS solar cell, P. C. Ho^1,2)*, K. H. Yang¹⁾, C. C. Chang¹⁾, K. M. Chang²⁾, 1) Industrial Technology Research Institute, Taiwan, 2) National Chiao Tung University, Taiwan (no show)

TF P1-11 Effects of substrate temperature on chromium oxycarbide thin film formation by reactive DC sputtering with carbon dioxide gas, T. Sonoda*, S. Nakao, M. Ikeyama, AIST, Japan

TF P1-12 Simultaneous growth of carbon nanotubes and carbon nanocapsules in a low pressure inductively coupled plasma, K. Okada*, National Institute for Materials Science, Japan

TF P1-13 Structure change of titanium nitride films prepared by oblique angle deposition, J.-I. Jeong*, J.-H. Yang, H.-S. Park, J.-H. Jung, M.-A. Song, RIST, Korea

TF P1-14 Preparation of Cu₂Y₂O₅ thin films by rf magnetron sputtering and its antibacterial property, T.-W. Chiu¹⁾*, L.-W. Yang¹⁾, Y.-P. Wang¹⁾, Y.-L. Yang²⁾, C.-H. Chang¹⁾, 1) Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taiwan, 2) Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taiwan

TF P1-15 Effect of plasma treatment of resistive layer on a Cu/SiO_x/Pt memory device, C.-Y. Liu¹⁾*, Y.-Y. Tsai¹⁾, C.-H. Lai²⁾, 1) National Kaohsiung University of Applied Sciences, Taiwan, 2) National United University, Taiwan

TF P1-16 Leakage current behaviors of undoped and Y-doped ZrO₂ films with aluminum electrodes, T.-H. Yeh, R.-D. Lin, B.-R. Cherng*, J.-S. Cherng, Ming Chi University of Technology, Taiwan

TF P1-17 Two stages oxidation of sputtering deposited hafnium, C.-W. Lin*, W.-W. Chen, The University of Tatung, Taiwan

TF P1-18 The effect of annealing treatment on the electrical characteristics of Pt/ZnO/Cr/ZnO/Pt RRAM device, L.-C. Chang^1,2)*, K.-H. Liu³⁾, H.-L. Kao³⁾, 1) Department of Materials Engineering, Ming Chi University of Technology, Taiwan, 2) Center for Thin Film Technologies and Applications, Ming Chi University of Technology, Taiwan, 3) Chang Gung University, Taiwan

TF P1-19 Structural changes of Al thin films deposited with magnetron sputtering, J. H. Yang*, H.-S. Park, J.-H. Jung, M.-A. Song, J.-I. Jeong, RIST, Korea

TF P1-20 Structure evolution of Al-Mg films by heat treatment, J.-H. Jung*, J. H. Yang, H.-S. Park, M.-A. Song, J.-I. Jeong, RIST, Korea

TF P1-21 Properties of Al and Al-Si films deposited by oblique angle deposition, H. S. Park*, J. H. Yang, J. H. Jung, M. A. Song, J. I. Jeong, RIST, Korea

TF P1-22 Residual stress measurement in metal interlayer of metal-ceramics functionally graded thin film, K. Kusaka*, K. Tominaga, The University of Tokushima, Japan

TF P1-23 Electrical properties of post-annealed VO₂ thin films on silicon substrates with metal-insulator transition, N. H. Azhan*, K. Okimura, Tokai University, Japan

[ Applications: POSTER ]

AP P-1 Adsorption sensitivities of organic thin films prepared by an r.f. sputtering with poly(tetrafluoroethylene) (PTFE) and polyester (PET) targets for acetaldehyde and toluene, Y. Ohnishi¹⁾*, S. Kaku¹⁾, S. Iwamori¹⁾, K. Noda²⁾, 1) Tokai university, Japan, 2) AIST, Japan

AP P-2 Influence of active oxygen species generated by ultraviolet lamps on sterilization properties of microorganisms, Y. Ikeda¹⁾*, R. Yamamoto¹⁾, T. Ryougoku¹⁾, K. Oya¹⁾, H. Matsumoto^1,2), K. Yoshino^1,2), K. Noda³⁾, S. Iwamori^1,3), 1) Tokai university, Japan, 2) Iwasaki Electric Co, Ltd., Japan, 3) AIST, Japan

AP P-3 Influence of atmospheric pressure plasma treatment on the wettability of silk, C. W. Kan*, The Hong Kong Polytechnic University, Hong Kong

AP P-4 Effects of substrate temperature and pH of aqueous electrolytes on the electrochromic properties of reactively sputtered tungsten oxide thin films, R. Todo*, A. Hosokawa, Y. Abe, M. Kawamura, K. H. Kim, Kitami Institute of Technology, Japan

AP P-5 Antibacterial properties and cytocompatibility of tantalum oxide coatings with different silver contents, H.-L. Huang¹⁾, Y.-Y. Chang²⁾*, H.-J. Chen²⁾, Y.-K. Chou²⁾, C.-H. Lai³⁾, M. YC Chen^2,4), 1) School of Dentistry, China Medical University, Taiwan, 2) National Formosa University, Taiwan, 3) School of Medicine, China Medical University, Taiwan, 4) China Medical University Hospital, Taiwan

AP P-6 Conversion of organic compounds by pulsed discharge plasma at pressurized argon and aqueous solution interface, Y. Hayashi*, W. Diono, S. Machmudah, M. Goto, Nagoya University, Japan

AP P-7 Quantitative analyses of active oxygen species generated by ultraviolet (UV) lamps, K. Oya¹⁾*, K. Koike¹⁾, K. Tomoda¹⁾, H. Matsumoto^1,2), S. Iwamori¹⁾, 1) Tokai University, Japan, 2) Iwasaki Electric Co, Ltd., Japan

AP P-8 Chemical inertness of Ir-Re coatings with B₂O₃-ZnO-La₂O₃-CaO-Li₂O-SiO₂ based glass in glass molding processes, S.-C. Liu^1,2), Y.-I Chen³⁾*, J.-J. Shyu⁴⁾, H.-Y. Tsai²⁾, K.-Y. Lin³⁾, Y.-H. Chen¹⁾, 1) Young Optics Inc., Taiwan, 2) National Tsing Hua University, Taiwan, 3) National Taiwan Ocean University, Taiwan, 4) Tatung University, Taiwan (withdrawal)

AP P-9 Hydrophilic TiO₂ coated catalyst layer by pulsed magnetron sputter deposition for self-humidifying proton exchange membrane fuel cell, C.-L. Lin¹⁾*, K.-W. Weng²⁾, Z.-G. Wang³⁾, W.-Y. Ho³⁾, 1) Department of Electro-Optical and Energy Engineering, MingDao University, Taiwan, 2) National Quemoy University, Taiwan, 3) Department of Materials Science and Engineering, MingDao University, Taiwan

AP P-10 Performance improvement of gadolinium oxide resistive random access memory treated by hydrogen plasma immersion ion implantation, C.-H. Hsu¹⁾, Y.-R. Ye¹⁾, J.-C. Wang¹⁾*, C.-H. Chiu¹⁾, C.-S. Lai²⁾, C.-F. Ai²⁾, W.-F. Tsai²⁾, 1) Chang Gung University, Taiwan, 2) Atomic Energy Council, Taiwan

AP P-11 Ce-doped ZnO nanorods based low operation temperature NO₂ gas sensors, C.-J. Chang, C.-Y. Lin*, Feng Chia University, Taiwan (withdrawal)

AP P-12 Antibacteria and anti-wear TaN-(Ag,Cu) nanocomposite thin films deposited on PEEK (polyether ether ketone), J. H. Hsieh¹⁾*, Y. T. Su¹⁾, Y. C. Lin¹⁾, C. Li²⁾, C. H. Chiu³⁾, C. T. Huang³⁾, 1) Ming Chi University of Technology, Taiwan, 2) National Central University, Taiwan, 3) Chang-Gung Memorial Hospital, Taiwan

AP P-13 Electrical property of TiN on gallium nitride under different sputtering conditions, L. Li*, A. Kishi, T. Shiraishi, Y. Jiang, Q. Wang, J.-P. Ao, The University of Tokushima, Japan

Thursday July 11: Oral session
Science Hall 9:00 - 17:00

[ Fundamentals of Sputtering and Plasma ]

09:00 KN-2 Structure formation upon reactive sputtering of thin films, M. Wuttig*, D. Köhl, RWTH Aachen, Germany (keynote)

09:40 FS-1 Reactive high power impulse magnetron sputtering, J. T. Gudmundsson^1,2)*, F. Magnus³⁾, T. K. Tryggvason²⁾, S. Shayestehaminzadeh²⁾, O. B. Sveinsson²⁾, S. Olafsson²⁾, 1) University of Michigan – Shanghai Jiao Tong University Joint Institute, China, 2) University of Iceland, Iceland, 3) Uppsala University, Sweden

10:00 FS-2 Dynamics of short pulses high power impulse magnetron sputtering Ti - Ar/O₂ Discharges through time- and energy- resolved mass spectrometry, M. Palmucci¹⁾*, R. Snyders^1,2), S. Konstantinidis¹⁾, 1) University of Mons, Belgium, 2) Materia Nova Research Center, Belgium

10:20 FS-3 Combined optical diagnostics of a high-power impulse magnetron sputtering discharge, N. Britun¹⁾*, M. Palmucci¹⁾, S. Konstantinidis¹⁾, R. Snyders^1,2), 1) University of Mons, Belgium, 2) Materia Nova Research Center, Belgium

[ Plasma Processes ]

10:40 PP-1 Industrial ion sources, V. V. Zhurin*, Colorado Advanced Technology LLC, USA (no show)

11:00 PP-2 Retarding field energy analyzer for ion energy and ion flux, F. Jones*, Impedans Ltd., Ireland (not presented)

11:20 PP-3 Solution plasma process ~ New chemical reaction field, N. Saito*, Nagoya University, Japan (invited)

12:00-13:00 LUNCH BREAK

[ Sputtering Processes II ]

13:00 SP 2-1 High quality TCO coatings on flexible films by using roll-to-roll sputtering, G.-H. Lee*, J.-H. Yun, S.-H. Lee, Y.-H. Park, KIMS, Korea (invited)

13:40 SP 2-2 Industrial Magnetron Sputtering for Flexible Substrates, J. Strümpfel*, M. Dimer, F. Otto, VON ARDENNE, Germany

14:00 SP 2-3 The properties of Al doped ZnO films deposited on polyethylene terephthalate (PET) by facing target sputtering at low temperature, J. B. Kim*, K. S. Shin, Y. S. Choi, I. S. Choi, J. G. Han, Sungkyunkwan University, Korea

14:20 SP 2-4 Fabrication and characterization of Al doped ZnO films using reactive magnetron sputtering, J. Jia*, M. Kusayanagi, N. Oka, Y. Shigesato, Aoyama Gakuin University, Japan

14:40 SP 2-5 Synthesis and deposition of metal nanoparticles by gas phase condensation (GPC) process, M. Maicu¹⁾*, R. Schmittgens²⁾, D. Hecker^1,2), D. Glöß¹⁾, P. Frach¹⁾, G. Gerlach²⁾, 1) Fraunhofer Institute for Electron Beam and Plasma Technology (FEP), Germany, 2) Dresden University of Technology, Germany

15:00 -15:20 COFFEE BREAK

[ Thin Films I ]

15:20 TF1-1 Thin film metallic glasses: current status and future trends, J. P. Chu*, National Taiwan University of Science and Technology, Taiwan (invited)

16:00 TF1-2 Influence of In/Al ratio on In-rich InAlN ternary alloys on GaN(0001) template by plasma-assisted molecular beam expitaxy, Y.-H. Wu*, Y.-Y. Wong, W.-C. Chen, J.-S. Tian, K.-A. Chiu, C.-Y. Peng, L. Chang, E. Y. Chang, National Chiao Tung University, Taiwan

16:20 TF1-3 Sputter deposition of single crystal ZnO films on 18% lattice mismatched c-Al₂O₃ substrates via nitrogen mediated crystallization, N. Itagaki^1,2)*, K. Kuwahara¹⁾, I. Suhariadi¹⁾, K. Oshikawa¹⁾, K. Matsushima¹⁾, D. Yamashita¹⁾, H. Seo¹⁾, K. Kamataki¹⁾, G. Uchida¹⁾, K. Koga¹⁾, M. Shiratani¹⁾, 1) Kyushu University, Japan, 2) PRESTO, Japan

16:40 TF1-4 Characterization of multilayered SiO_xNy:H/SiCN_x:H antireflection coatings by electron cyclotron resonance chemical vapor deposition, C.-A. Lin¹⁾*, I-C. Chen¹⁾, T.-M. Kuan²⁾, C.-Y. Yu²⁾, 1) National Central University, Taiwan, 2) Taiwan solar energy corporation, Taiwan

Thursday July 11: Poster session
Atrium 17:20 - 19:00
(with Drinks and Light Meals)

[ Posters from Oral Sessions ]

[Fundamentals of Sputtering and Plasma] KN-2, FS-1, FS-2, FS-3

[Sputtering Processes II] SP2-1, SP2-2, SP2-3, SP2-4, SP2-5

[Thin Films I] TF1-1, TF1-2, TF1-3, TF1-4

[ Fundamentals of Sputtering and Plasma: POSTER ]

FS P-1 Effect of nitrogen ion bombardment during deposition of hafnium nitride thin film, Y. Gotoh*, H. Tsuji, J. Ishikawa, Kyoto University, Japan

FS P-2 Modeling on IV-characteristics of DC-magnetron for high-speed simulation, S. Ogata*, Atelier Modeling Japan, Japan

FS P-3 Enhanced detection of ions in plasmas with bias voltages, A. Suzuki¹⁾*, S. Asahina²⁾, 1) AIST, Japan, 2) Shimane Institute for Industrial Technology, Japan

FS P-4 Dependence of transport process of sputtered atoms on atom weight, gas pressure and target to substrate distance, R. Yamazaki*, T. Nakano, S. Baba, Seikei University, Japan

FS P-5 A study on the synthesis process of Ti-A_l-X (X= Si, Cr, B) sintered materials and their usefulness as the sputtering targets, J. H. Pyun^1,2)*, H. C. Lee¹⁾, K. I. Moon¹⁾, C. H. Lee²⁾, 1) Incheon Heat & Surface Technology Center, Korea, 2) Hanyang University, Korea

[ Sputtering Processes: POSTER II ]

SP P2-1 Reactive deposition of Al-doped zinc oxides by high power impulse magnetron sputtering, L.-C. Chang^1,2)*, S.-C. Wang¹⁾, C.-K. Chang¹⁾, 1) Department of Materials Engineering, Ming Chi University of Technology, Taiwan, 2) Center for Thin Film Technologies and Applications, Ming Chi University of Technology Taiwan

SP P2-2 Effects of substrate bias voltage on Ti-Si-C thin film formation by magnetron sputtering using elemental targets, T. Sonoda*, S. Nakao, M. Ikeyama, AIST, Japan

SP P2-3 Film structure modification by plasma potential control in triode HPPMS, T. Umahashi*, T. Nakano, S. Baba, Seikei University, Japan

SP P2-4 Study of CrN films deposited using a proportional-integral-derivative (PID) feedback controlled high power impulse magnetron sputter deposition system, C.-L. Chang^1,2), B.-H. Hsiao¹⁾, P.-H. Chen²⁾, W.-C. Chen²⁾, W.-Y. Wu^1,2)*, 1) Department of Materials Science and Engineering, MingDao University, Taiwan, 2) Surface Engineering Research Center, MingDao University, Taiwan

[ Plasma Processes: POSTER ]

PP P-1 Damage characteristics of 6H-SiC surfaces etched using capacitively-coupled helium plasmas driven by a radio frequency power, R. Kawakami¹⁾*, M. Niibe²⁾, H. Takeuchi³⁾, T. Shirahama¹⁾, M. Konishi¹⁾, Y. Mori¹⁾, T. Yamada¹⁾, K. Tominaga¹⁾, 1) The University of Tokushima, Japan, 2) University of Hyogo, Japan, 3) The University of Shiga Prefecture, Japan

PP P-2 Effect of post-deposition plasma bombarding treatment on corrosion properties of CrAlSiN coated AISI 304 stainless steel, W.-Y. Ho*, J.-B. Chang, C.-L. Lin, MingDoa University, Taiwan

PP P-3 Simulation of VHF hydrogen plasma produced by balanced power feeding, K. Ogiwara¹⁾*, W. Chen²⁾, K. Uchino²⁾, Y. Kawai²⁾, 1) Graduate School of Information Science and Electrical Engineering, Kyushu University, Japan, 2) Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Japan

PP P-4 Translocation of zinc ion particles dissociated from zinc acetate mist for proposed new processing, N. Mizuike¹⁾*, H. Himura¹⁾, S. Okada²⁾, A. Sanpei¹⁾, S. Masamune¹⁾, 1) Kyoto Institute of Technology, Japan, 2) Osaka University, Japan

PP P-5 Development of negative oxygen plasma source applied to produce pure ZnO particles at room temperature, M. Yamamoto¹⁾*, H. Himura¹⁾, A. Kiyohara¹⁾, S. Okada²⁾, A. Sanpei¹⁾, S. Masamune¹⁾, 1) Kyoto Institute of Technology, Japan, 2) Osaka University, Japan

PP P-6 Oxygen ion treatment of SiO_xC_yH_z layer for multilayer barrier coating, S. Lee*, Y.-J. Kang, J.-K. Kim, D.-G. Kim, Korea Institute of Materials Science, Korea

PP P-7 Ion beam sputtering process by anode layer linear ion source, S. Lee¹⁾, Y.-J. Kang¹⁾, J.-K. Kim¹⁾, S. J. Homg²⁾, T.-Y. Kim²⁾, C. J. Choi³⁾, D.-G. Kim¹⁾*, 1) Korea Institute of Materials Science, Korea, 2) Posco Technical Research Laboratories, Korea, 3) Chonbuk National University, Korea

PP P-8 Growth and characterization of In-rich InAlN film on Si (111) substrate by RF-MOMBE, W.-C. Chen*, Y.-H. Wu, J.-S. Tian, T.-C. Yen, P.-Y. Lin, J.-Y. Chen, L. Chang, National Chiao Tung University, Taiwan

[ Thin Films: POSTER II ]

TF P2-1 Investigation of nano-structured transparent conductive films by rotational-sequential-sputtering method, J.-H. Lu^1,2)*, B.-Y. Chen¹⁾, C.-H. Wang¹⁾, 1) Department of Materials Engineering, Ming Chi University of Technology, Taiwan, 2) Center for Thin Film Technologies and Applications, Ming Chi University of Technology, Taiwan

TF P2-2 Low resistance and high visible transmittance of transparent ZnO based films with an embedded metal layer by sputtering, C. C. Wang¹⁾, J. J. Zhong²⁾, Y. R. Jhang²⁾, T. L. Tsai²⁾, P. S. Chen²⁾*, 1) Industrial Technology Research Institute, Taiwan, 2) MingHsin University of Science and Technology, Taiwan

TF P2-3 Microstructures, optical and electrical properties of NiO-In composite films by radio frequency co-sputtering, S. C. Chen^1,2), T. Y. Kuo³⁾, Y. C. Lin¹⁾, C. D. Chen¹⁾*, H. C. Lin^2,3), 1) Department of Materials Engineering, Ming Chi University of Technology, Taiwan, 2) Center for Thin Film Technologies and Applications, Ming Chi University of Technology, Taiwan, 3) National Taiwan University, Taiwan

TF P2-4 Self-propagating exothermic reaction in Ni-free multilayer film, S. Minamibata*, T. Namazu, K. Yoshiki, S. Inoue, University of Hyogo, Japan

TF P2-5 Preparation of TiCN thin films by plasma based ion implantation system combined with sputtering, S. Nakao*, A. Matsumoto, Z. M. Sun, R. Furushima, H. Hosokawa, K. Shimojima, K. Katou, AIST-Chubu, Japan

TF P2-6 NiSi thin films applied for write-once blue laser recording, S.-C. Chen¹⁾, Y.-C. Lin¹⁾*, S.-L. Ou²⁾, T.-Y. Kuo²⁾, 1) Ming Chi University of Technology, Taiwan, 2) National Taiwan University, Taiwan

TF P2-7 Preferential orientation of (Na,K)NbO₃ films on glass substrate by sputtering process, N. Kikuchi¹⁾*, K. Fujishiro²⁾, A. Jido²⁾, K. Nishio²⁾, K. Tonooka¹⁾, R. Wang¹⁾, 1) AIST, Japan, 2) Tokyo University of Science, Japan

TF P2-8 Properties and analysis of transparency conducting AZO Films by using DC and RF sputtering simultaneously, N.-F. Shih¹⁾*, J.-Z. Chen²⁾, Y.-L. Jiang²⁾, 1) Hsiuping University of Science and Technology, Taiwan, 2) National Chung-Hsing University, Taiwan

TF P2-9 Defect growth of Ag front surface mirror deposited by magnetron sputtering, Y. Nakanishi*, M. Horikawa, K. Kato, M. Yonekura, Central Glass Co., Ltd., Japan

TF P2-10 Covalent surface modification of ECR plasma sputtered amorphous carbon thin films, T. Okubo*, A. Tada, T. Iwasawa, Y. Aoi, Ryukoku University, Japan

TF P2-11 Internal oxidation and mechanical properties of Ru based alloy coatings, Y.-I Chen¹⁾*, H.-N. Chu¹⁾, H.-H. Wang¹⁾, L.-C. Chang^2,3), J.-W. Lee^2,3), 1) National Taiwan Ocean University, Taiwan, 2) Department of Materials Engineering, Ming Chi University of Technology, Taiwan, 3) Center for Thin Film Technologies and Applications, Ming Chi University of Technology, Taiwan

TF P2-12 Study of the structure and physical properties of Ge-Sb-Te thin film deposited by rf magnetron sputtering, C.-M. Lei¹⁾*, Y.-C. Wang¹⁾, C.-Y. Tai²⁾, C. C. Huang³⁾, D. W. Hewak³⁾, 1) Chinese Culture University, Taiwan, 2) National Central University, Taiwan, 3) University of Southampton, UK

TF P2-13 Formation of self-assembled monolayer on pulsed laser deposited amorphous carbon thin films, H. Hara*, Y. Aoi, Ryukoku University, Japan

TF P2-14 Photocatalytic properties of TiO₂ films prepared by bipolar pulsed magnetron sputtering, K.-W. Weng¹⁾*, Y. H. Lin¹⁾, T.-N. Lin²⁾, H.-Y. Lu¹⁾, C.-T. Lee¹⁾, Y.-P. Huang¹⁾, 1) National Quemoy University, Taiwan, 2) Institute of Nuclear Energy Research, Taiwan

TF P2-15 Properties of TiN films deposited by magnetron sputtering, M.-A. Song*, H.-S. Park, J.-H. Yang, J.-I. Jeong, RIST, Korea

TF P2-16 Layered growth of vanadium dioxide films on Ti/Si by inductively coupled plasma assisted sputtering method and out-of-plane electrical switching characteristics, M. S. Mian*, K. Okimura, Tokai University, Japan

TF P2-17 Measure the in-plane distribution of the piezoelectric properties of BaTiO₃ thin films by the 3D optical microscope performs three-dimensional surface measurements, M. Seki¹⁾*, A. Hanada¹⁾, H. Miura¹⁾, K. Kinoshita^1,2), S. Kishida^1,2), 1) Tottori University, Japan, 2) Tottori University, Electronic Display Research Center, Japan

TF P2-18 Characteristics of Na doped CuGa thin film deposited by CuGa-NaF sputtering target., K. Umemoto¹⁾*, S. Zhang¹⁾, S. Mori²⁾, R. Mori²⁾, K. Ishiyama²⁾, Y. Yoshida²⁾, 1) Sanda Plant, Mitsubishi Materials Corporation, Japan, 2) Central Research Institute, Mitsubishi Materials Corporation, Japan

TF P2-19 Bilayer GZO/SiO₂ thin films used as front electrode of tandem silicon thin film solar cells, K.-H. Yang¹⁾, P.-C. Ho²⁾*, K.-M. Chang³⁾, A. Ariyarit²⁾, C.-E. Wu²⁾, T.-H. Chou¹⁾, 1) Industrial Technology Research Institute, Taiwan, 2) National Chiao Tung University, Taiwan, 3) National Chiao Tung University; College of Electrical and Information Engineering, I-Shou University, Taiwan (no show)

Friday July 12: Oral session
Science Hall 9:00 - 15:00

[ Plasma Induced Process Technologies ]

09:00 PI-1 Plasma-assisted processes for fabrication of carbon nanostructures, S. Kumar*, CSIRO, Australia (invited)

09:40 PI-2 Oxygen plasma immersion ion implantation treatment to enhance data retention of tungsten nanocrystal nonvolatile memory, J.-C. Wang¹⁾*, W.-C. Chang¹⁾, C.-S. Lai¹⁾, L.-C. Chang²⁾, C.-F. Ai³⁾, W.-F. Tsai³⁾, 1) Chang Gung University, Taiwan, 2) Ming Chi University of Technology, Taiwan, 3) Atomic Energy Council, Taiwan

10:00 PI-3 The dependence of processing parameters on deposition uniformity in hydrogenated amorphous silicon (a-Si:H) films grown by ECR-CVD, L. C. Hu¹⁾, Y. S. Li¹⁾, C. J. Wang¹⁾, C. C. Lee²⁾, J. Y. Cheng²⁾, S. H. Wang³⁾, T. T. Li¹⁾*, 1) Department of Mechanical Engineering, National Central University, Taiwan, 2) Optical Science Center, National Central University, Taiwan, 3) Topco Scientific CO., Ltd, Taiwan

10:20 PI-4 Deposition of thick dielectric films of diamond-like carbon for graphene-channel THz laser by photoemission-assisted plasma-enhanced CVD, R. Ješko¹⁾*, M. Yang¹⁾, H. Hayashi¹⁾, S. Ogawa¹⁾, S. Takabayashi²⁾, T. Etou²⁾, Y. Kurita²⁾, T. Otsuji²⁾, Y. Takakuwa¹⁾, 1) Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Japan, 2) Research Institute of Electrical Communication, Tohoku University, Japan

[ Micro and Nano Technologies ]

10:40 MN-1 Material design rule for nanoscale memristive switching, K. Nagashima¹⁾*, T. Yanagida¹⁾, M. Kanai¹⁾, A. Klamchuen¹⁾, S. Rahong¹⁾, G. Meng¹⁾, M. Horprathum²⁾, F. Zhuge¹⁾, Y. He¹⁾, B. H. Park³⁾, T. Kawai^1,3), 1) Osaka University, Japan, 2) National Electronics and Computer Technology Center, Thailand, 3) Konkuk University, Korea

11:00 MN-2 Spontaneously emerged periodic stripes of superconducting NbN thin films on Si trench sidewall by reactive RF magnetron sputtering of Nb, N. Sugimoto^1,2)*, K. Obinata¹⁾, T. Motohiro^1,2,3), 1) TOYOTA Central R&D Labs., INC., Japan, 2) TOYOTA Technological Institute, Japan, 3) Nagoya University, Japan

11:20 MN-3 Growth of impurity-doped group IV semiconductor nanocrystals by sputtering, M. Fujii*, Kobe University, Japan (invited)

12:00-13:00 LUNCH BREAK

[ Thin Films II ]

13:00 TF2-1 Microstructural gradation of CZTS thin film prepared by CuZnSn single precursor, C. Y. Su¹⁾*, K. H. Liao¹⁾, C.-T. Pan²⁾, 1) National Taipei University of Technology, Taiwan, 2) National Sun Yat-Sen University, Taiwan

13:20 TF 2-2 One-step deposition of Cu₂ZnSnS₄ thin films by hot-wall sputtering, M. Sakamoto*, E. Kusano, Kanazawa Institute of Technology, Japan

13:40 TF2-3 Recent developments on coatings on glass for the solar century, B. Szyszka¹⁾*, G. Bräuer²⁾, T. Jung²⁾, R. Muydinov¹⁾, A. Pflug²⁾, L. Schäfer²⁾, H. S. Kurmes¹⁾, N. Papathanasiou²⁾, F. Ruske³⁾, R. Schlatmann²⁾, M. Siemers²⁾, V. Sittinger²⁾, B. Stannowski²⁾, S. Ulrich²⁾, M. Vergöhl²⁾, 1) Berlin Institute of Technology, Germany, 2) Fraunhofer IST, Germany, 3) PVcomB, Germany

14:00 TF2-4 Reactive sputtering process control for industrial deposition of chalcogen compounds, I. Fernández-Martínez^1,2), F. Briones²⁾, V. Bellido-González³⁾, A. Wennberg⁴⁾, M. Penedo⁴⁾, B. Daniel³⁾, J. Brindley³⁾, D. Monaghan³⁾*, 1) IES-UPM, Spain, 2) IMM-CSIC, Spain, 3) Gencoa Ltd., UK, 4) ETSII-UPM, Spain

14:20 TF2-5 Advantage of sputtering targets manufactured by powder-metallurgy: Examples from thin film PV and hard coating, C. Adelhelm¹⁾*, J. Winkler¹⁾, P. Polcik²⁾, 1) PLANSEE SE, Austria, 2) PLANSEE Composite Materials GmbH, Germany

14:40 TF2-6 Plasma Technology for crystalline silicon solar cells - challenges and new applications, J. Rentsch*, S. Nold, J. Seiffe, P. Saint-Cast, M. Hofmann, Fraunhofer ISE, Germany

Friday July 12: Poster session
Atrium 15:20 - 16:40
(with Drinks and Light Meals)

[ Posters from Oral Sessions ]

[Plasma Induced Process Technologies] PI-1, PI-2, PI-3, PI-4

[Micro and Nano Technologies] MN-1, MN-2, MN-3

[Thin Films II] TF2-1, TF2-2, TF2-3, TF2-4, TF2-5, TF2-6

[ Plasma Induced Process Technologies: POSTER ]

PI P-1 In situ formation of aluminum germanate interlayer for high-k/Ge metal-oxide-semiconductor structures by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen, T. Hanada¹⁾*, K. Yanachi¹⁾, H. Ishizaki¹⁾, Y. Otani¹⁾, C. Yamamoto²⁾, J. Yamanaka³⁾, T. Sato²⁾, T. Takamatsu⁴⁾, Y. Fukuda¹⁾, 1) Tokyo University of Science, Suwa, Japan, 2) University of Yamanashi, Japan, 3) University of Yamanashi, Japan, 4) SST Inc., Japan

PI P-2 Comparison of SF₆ and NF₃ plasmas for dry etch of SiN film, J. Lee*, J. Ahn, Y. S. Jung, H. S. Cho, Y. Choi, LG Display Co., Ltd., Korea

PI P-3 Plasma induced nanosecond laser ablation of solid target under supercritical CO₂, W. Diono¹⁾*, S. Machmudah^1,2), N. Takada³⁾, K. Sasaki⁴⁾, M. Goto¹⁾, 1) Department of Chemical Engineering, Nagoya University, Japan, 2) Sepuluh Nopember Institute of Technology, Indonesia, 3) Department of Electrical Engineering and Computer Science, Nagoya University, Japan, 4) Hokkaido University, Japan

PI P-4 Interaction between polyatomic cluster ion and mica surface, H. Ryuto*, Y. Ohmura, M. Nakagawa, M. Takeuchi, G. H. Takaoka, Kyoto University, Japan

[ Thin Films: POSTER III ]

TF P3-1 Raman analysis of diamond-like carbon films prepared by DC magnetron sputtering as a function of Ar gas pressure, S. Nakao¹⁾*, T. Sonoda¹⁾, J. Choi²⁾, T. Kato²⁾, 1) AIST-Chubu, Japan, 2) The University of Tokyo, Japan

TF P3-2 Electrochromic highly porous WO₃ thin films prepared by glancing-angle magnetron sputtering, P. Eiamchai¹⁾*, M. Horprathum¹⁾, C. Chananonnawathorn²⁾, S. Limwichean¹⁾, K. Aimpanakit²⁾, T. Srichaiyaperk²⁾, V. Patthanasettakul¹⁾, N. Nuntawong¹⁾, P. Chindaudom¹⁾, 1) National Electronics and Computer Technology Center, Thailand, 2) Thammasat University, Thailand (withdrawal)

TF P3-3 The impact of deposition parameters on MgO film’s grain growth with reactive magnetron sputtering, W. Qiang*, L. Heng, H. W. Bo, W. S. Li, Xi'an Jiaotong University, China (no show)

TF P3-4 Defects in non-polar (13-40) ZnO epitaxial film grown on (114) LaAlO₃ substrate, T.-C. Yen*, W.-L. Wang, C.-Y. Peng, J.-S. Tian, Y.-T. Ho, C. Li, National Chiao Tung University, Taiwan

TF P3-5 The influences of nitrogen contents on the microstructure and mechanical properties of Ti-Si-B-N thin films, L.-C. Hsu¹⁾, J.-W. Lee^1,2)*, B.-S. Lou³⁾, 1) Dept. of Materials Engineering, Ming Chi University of Technology, Taiwan, 2) Center for Thin Films Technologies and Applications, Ming Chi University of Technology, Taiwan, 2) Chang Gung University, Taiwan

TF P3-6 Layer by layer deposition of ZnO buffer layers fabricated via nitrogen mediated crystallization for ZnO:Al transparent conducting oxide, I. Suhariadi*, K. Oshikawa, K. Kuwahara, K. Matsushima, D. Yamashita, G. Uchida, K. Koga, M. Shiratani, N. Itagaki, Kyushu University, Japan

TF P3-7 Microstructures and mechanical properties of DLC with a CN_x interlayer on Ti₆Al₄V Alloy, C.-C. Chou, J.-S. Lin*, National Taiwan Ocean University, Taiwan

TF P3-8 Low-temperature synthesis of diamond films by photoemission-assisted plasma-enhanced chemical vapor deposition, M. Kawata¹⁾*, Y. Ojiro¹⁾, S. Ogawa¹⁾, T. Masuzawa²⁾, K. Okano²⁾, Y. Takakuwa¹⁾, 1) Tohoku University, Japan, 2) International Christian University, Japan

TF P3-9 The development and application on the process technique of (ZrHf)N thin film, Y. W. Lin*, National Applied Research Laboratories, Taiwan

TF P3-10 A study on the ternary elements Ni addition on the MoN-Cu coating deposited by magnetron sputtering process with single alloying target, J. Y. Choi^1,2)*, K. I. Moon¹⁾, S. Y. Shin¹⁾, G. Y. Yeom²⁾, 1) Korea Institute of Industrial Technology, Korea, 2) Sungkyunkwan University, Korea

TF P3-11 Hydrophobic films synthesis by PECVD and mechanical & chemical properties of the film, J. S. Lee¹⁾*, S. B. Jin¹⁾, Y. S. Choi¹⁾, I. S. Choi¹⁾, J. G. Han¹⁾, M. Hori²⁾, 1) Sungkyunkwan University, Korea, 2) Nagoya University, Japan

TF P3-12 The influences of the compressive and tensile stresses on the stability of ITO films deposited on the PET substrates, J.-S. Hsu¹⁾*, B.-J. Wen²⁾, C.-K. Xie¹⁾, 1) National Formosa University, Taiwan, 2) ITRI, Taiwan

[ Micro and Nano Technologies: POSTER ]

MN P-1 Improvement of field emission properties of carbon nanotube films, K. Oohara¹⁾*, H. Sato¹⁾, K. Shimanaka¹⁾, M. Hattori¹⁾, Y. Saito²⁾, 1) Mie University, Japan, 2) Nagoya University, Japan

MN P-2 Growth control of copper oxide nanowires, N. Yokouchi*, K. Maeda, H. Sato, Mie University, Japan

MN P-3 Comparison of particles generated by fundamental and second harmonic laser ablation in supercritical CO₂ medium, S. Machmudah^1,2)*, W. Diono¹⁾, N. Takada³⁾, K. Sasaki⁴⁾, M. Goto¹⁾, 1) Department of Chemical Engineering, Nagoya University, Japan, 2) Sepuluh Nopember Institute of Technology, Indonesia, 3) Department of Electrical Engineering and Computer Science, Nagoya University, Japan, 4) Hokkaido University, Japan

MN P-4 Effect of temperature condition and surfactant on the formation of iron nanoparticle using pulsed plasma in liquid, Z. Kelgenbaeva¹⁾*, E. Omurzak²⁾, S. Sulaimankulova³⁾, M. Goto²⁾, T. Mashimo⁴⁾, 1) Graduate School of Science and Technology, Kumamoto University, Japan, 2) Priority Organization of Innovation and Excellence, Kumamoto University, Japan, 3) National Academy of Science of the Kyrgyz Republic, Kyrgyzstan, 4) Shock wave and Condensed Matter research Center, Kumamoto University, Japan

MN P-5 Synthesis of carbon nanotubes filled with iron nanowires and tuning of those magnetic property, H. Sato*, N. Kubonaka, A. Nagata, Y. Fujiwara, Mie University, Japan

MN P-6 Growth of FePt encapsulated carbon nanotubes by thermal chemical vapor deposition, Y. Fujiwara¹⁾*, T. Kaneko¹⁾, K. Hori¹⁾, S. Takase¹⁾, H. Sato¹⁾, K. Maeda¹⁾, T. Kato²⁾, T. Kobayashi¹⁾, M. Jimbo³⁾, S. Iwata²⁾, 1) Mie University, Japan, 2) Nagoya University, Japan, 3) Daido University, Japan

MN P-7 Explosive detections of silver-based surface-enhanced Raman scattering substrates prepared by glancing-angle DC magnetron sputtering, S. Limwichean¹⁾*, M. Horprathum¹⁾, N. Nuntawong¹⁾, P. Eiamchai¹⁾, B. Wong-ek¹⁾, C. Chananonnawathorn²⁾, P. Limnonthakul³⁾, V. Patthanasettakul¹⁾, P. Chindaudom¹⁾, 1) National Electronics and Computer Technology Center, Thailand, 2) Thammasat University, Thailand, 3) Srinakharinwirot University, Thailand (withdrawal)

MN P-8 NO₂ detection of WO₃-nanorod-based gas sensors prepared by glancing-angle DC magnetron mputtering, M. Horpathum¹⁾*, T. Srichaiyaperk²⁾, B. Samransuksamer³⁾, A. Wisitsoraat⁴⁾, P. Eiamchai¹⁾, C. Chananonnawathorn²⁾, S. Limwichean¹⁾, V. Patthanasettakul¹⁾, N. Nuntawong¹⁾, K. Aimpanakit²⁾, P. Chindaudom¹⁾, 1) Optical Thin-Film Laboratory, National Electronics and Computer Technology Center, Thailand, 2) Thammasat University, Thailand, 3) King Mongkut's University of Technology Thonburi, Thailand, 4) Nano-microelectronic and Mechanic Laboratory, National Electronics and Computer Technology Center, Thailand (withdrawal)

MN P-9 Attempt to synthesize nanosized carbons under high temperature and high pressure using liquid source, H. Yokomichi¹⁾*, N. Kishimoto²⁾, 1) Toyama Prefectural University, Japan, 2) National Institute for Materials Science, Japan

MN P-10 Hydrophilic or hydrophobic DLC surface with nano-fibers induced by Cu contamination from electrode sputtered during RF O₂ plasma etching, T. Harigai¹⁾, K. Iwasa¹⁾, Y. Kakuta¹⁾*, Y. Yasuoka¹⁾, H. Furuta^1,2), A. Hatta^1,2), 1) Department of Electronic and Photonic Systems Engineering, Kochi University of Technology, Japan, 2) Institute for Nanotechnology, Kochi University of Technology, Japan

MN P-11 Electrical conductivity measurement on thin Ni catalyst layer deposited by DC magnetron sputtering for CNT growth, Y. Kusumoto¹⁾*, K. Matsumoto¹⁾, K. Sekiya¹⁾, H. Kouji¹⁾, H. Furuta^1,2), A. Hatta^1,2), 1) Department of Electronic and Photonic Systems Engineering, Kochi University of Technology, Japan, 2) Institute for Nanotechnology, Kochi University of Technology, Japan

Closing Remarks
Atrium 16:40 - 17:00

16:40 Poster Award Ceremony

16:50 Closing Remark
Kazuhiko Kato, Vice Chair, ISSP2013 committee, Central Glass Co., Ltd., Japan

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Contact to: ISSP2013 Office (Contact Information)

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Last Updated: 2013-08-01