ISSP2015: Symposium Program

Wednesday 8 Oral Session

Welcome Address

10:00 Youichi Kawakami, The Vacuum Society of Japan, Kyoto University, Japan

10:10 Kazuhiko Kato, Chair, ISSP2015 Committee, Central Glass Co., Ltd., Japan

Opening Session

10:20 KN-1 Functional coatings and plasma treatment of surfaces - Trends and recent applications, G. Bräuer*, R. Bandorf, S. Biehl, M. Keunecke, M. Vergöhl, Fraunhofer Institute for Surface Engineering and Thin Films IST, Germany (keynote)

11:00 OP-1 Plasma processes for creating biologically active materials: Fundamentals and recent progress in biomedical applications, M. MM Bilek¹⁾*, A. Kondyurin¹⁾, E. Kosobrodova¹⁾, G. Yeo²⁾, S. G Wise³⁾, N. J Nosworthy⁴⁾, C. G dos Remedios⁴⁾, A. S Weiss²⁾, D. R. McKenzie¹⁾, 1) School of Physics, University of Sydney, Australia, 2) School of Molecular Biosciences & Charles Perkins Centre, University of Sydney, Australia, 3) Heart Research Institute, Australia, 4) School of Medical Sciences, University of Sydney, Australia (invited)

Lunch Break 11:40-13:00

Applications I 13:00-15:00

13:00 AP1-1 R&D trend of PVD coating for corrosion resistance of steel in Korea, J.-I. Jeong*, J.-H. Yang, RIST, Korea (invited)

13:40 AP1-2 Design and metallurgy of targets for hard coating applications, P. Polcik*, Plansee Composite Materials GmbH, Germany

Vanadium-incorporated Indium-Tin-Oxide thin film transistor, M. G. Yun*, C. H. Ahn, S. W. Cho, S. H. Kim, Y. K. Kim, H. K. Cho, Sungkyunkwan University, Korea (withdrawal)

14:00 AP1-3 The effects of oxygen gases on enhancing electrochromic performance of flexible WFe_xO_yC_z films synthesized by a low temperature plasma polymerization, Y.-S. Lin*, W.-H. Lu, T.-H. Tsai, T.-T. Wu, Feng Chia University, Taiwan

14:20 AP1-4 Fabrication of polar and nonpolar ZnO thin films for UV photoconductive devices, C.-H. Chao*, D.-H. Wei, National Taipei University of Technology, Taiwan

AP1-5 Recent developments in plasma emission monitoring: technology and applications, M. Audronis*, Nova Fabrica Ltd., Lithuania (withdrawal)

Coffee Break 14:40-15:20

Applications II 15:20-16:00

15:20 AP1-6 Solid state incandescent LEDs based on sputter deposited metal oxide thin film, Y. Kuo*, Texas A&M University, USA (invited)

Sputtering Processes 16:00-17:00

16:00 SP1-1 Dual magnetron sputtering - the role of output power waveform and frequency, M. Heintze¹⁾*, S. Ulrich²⁾, 1) TRUMPF Hüttinger GmbH + Co. KG, Germany, 2) Fraunhofer Institute for Surface Engineering and Thin Films IST, Germany

16:20 SP1-2 Pulsed reactive magnetron sputtering of novel multifunctional films, J. Vlcek*, J. Rezek, P. Mares, University of West Bohemia, Czech Republic

16:40 SP1-3 Sputtering of silicon and glass substrates with polyatomic molecular ion beams generated from ionic liquids, M. Takeuchi*, Y. Hoshide, H. Ryuto, G. H Takaoka, Kyoto University, Japan

Wednesday 8 Poster Session 17:20-19:00

Sputtering Processes POSTER I

SP1-4p Synthesis of silicon oxynitride multilayer by RF magnetron sputtering for antireflection coating, W.-C. Shih*, W.-L. Yang, M.-S. Wu, Tatung University, Taiwan

SP1-5p Thermophysical properties of epitaxial GaN films deposited by reactive sputtering using a Ga target, Y. Isosaki¹⁾*, Y. Yamashita²⁾, T. Yagi²⁾, J. Jia¹⁾, N. Taketoshi²⁾, S. Nakamura¹⁾, Y. Shigesato¹⁾, 1) Aoyama Gakuin University, Japan, 2) AIST, Japan

SP1-6p Effect of process temperature on microstructure and mechanical properties of TiN coated by high power impulse magnetron sputtering, W.-C. Chen^1,2)*, C.-L. Chang^2,3), F. S. Shieu¹⁾, D.-Y. Wang^2,3), 1) National Chung Hsing University, Taiwan, 2) Surface Engineering Research Center, MingDao University, Taiwan, 3) Department of Materials and Energy Engineering, MingDao University, Taiwan

SP1-7p Effect of target composition on microstructure and mechanical properties of TiAlN coated by high power impulse magnetron sputtering, W.-C. Chen^1,2), F.-C. Yang^2,3), C.-L. Chang¹⁾*, F. S. Shieu^2,3), D.-Y. Wang^2,3), 1) National Chung Hsing University, Taiwan, 2) Surface Engineering Research Center, MingDao University, Taiwan, 3) Department of Materials and Energy Engineering, MingDao University, Taiwan

SP1-8p GaN and InGaN films deposited by reactive sputtering, S. Kamijou*, J. J. Jia, Y. Isosaki, Y. Shigesato, Aoyama Gakuin University, Japan

SP1-9p Effect of ion bombardment on the internal stress of sputtered thin films, R. Toyoda¹⁾*, S. Miyata¹⁾, M. Hashimoto¹⁾, T. Iijima²⁾, A. Tonegawa³⁾, Y. Matsumura¹⁾, 1) Graduate School of Engineering, Tokai University, Japan, 2) Graduate School of Science and Technology, Tokai University, Japan, 3) School of Science, Tokai University, Japan

SP1-10p Simple calculation of reactive sputtering for glancing-angle deposition of nitrides, Y. Inoue¹⁾*, M. Nakao¹⁾, T. Masukawa¹⁾, O. Takai²⁾, 1) Chiba Institute of Technology, Japan, 2) Materials & Surface Engineering Research Institute, Japan

SP1-11p The NiO Layer effect of Cu₂O/NiO/TiO₂ solar cells prepared by reactive magnetron sputtering, T. Tsuchiya*, I. Takano, Kogakuin University, Japan

SP1-12p Deposition of alumina films by pulsed gas flow sputtering, S. Iwatsubo¹⁾*, K. Ishii²⁾, 1) Toyama Industrial Technology Center, Japan, 2) Utsunomiya University, Japan

SP1-13p Oriented growth of VO₂ (B) thin films on Mo foil by reactive sputtering for lithium ion batteries, K. Su*, N. H. Azhan, K. Okimura, Tokai University, Japan

SP1-14p The mechanical properties and oxidation resistance of Zr_xN thin films by high power impulse magnetron sputtering, L.-C. Chang^1,2)*, Y.-I Chen³⁾, C.-Y. Chang¹⁾, H.-L. Kao⁴⁾, 1) Department of Materials Engineering, Ming Chi University of Technology, Taiwan, 2) Center for Thin Film Technologies and Applications, Ming Chi University of Technology, Taiwan, 3) National Taiwan Ocean University, Taiwan, 4) Chang Gung University, Taiwan

Plasma Processes POSTER I

PP1-1p Comparison between surface characteristics of titanium oxide thin films treated with N₂ dielectric barrier discharge plasma and annealed in N₂ gas, R. Kawakami¹⁾*, M. Niibe²⁾, Y. Nakano³⁾, T. Mukai⁴⁾, 1) Tokushima University, Japan, 2) University of Hyogo, Japan, 3) Chubu University, Japan, 4) Nichia Corporation, Japan

PP1-2p Remote modification effect on polypropylene membrane surface by methane/oxygen mixture plasma discharges, R.-S. Juang¹⁾*, W.-T. Hou²⁾, Y.-C. Huang²⁾, Y.-C. Tseng²⁾, C. Huang²⁾, 1) Chang Gung University, Taiwan, 2) Yuan Ze University, Taiwan

PP1-3p Simulation of a VHF SiH₄ plasma produced by a multi rod electrode for amorphous silicon solar cells, W. Chen¹⁾, L.-W. Su¹⁾, K. Ogiwara¹⁾, Y. Takeuchi²⁾, K. Uchino¹⁾, Y. Kawai¹⁾*, 1) Kyushu University, Japan, 2) Mitsubishi Heavy Industries, Ltd., Japan

PP1-4p Estimation of critical ion energy for surface planarization process using photoemission-assisted plasma ion source, Y. Kotanigawa*, S. Ajia, S. Ogawa, Y. Takakuwa, Tohoku University, Japan

PP1-5p Production of VHF Ar plasma produced by a narrow gap electrode, C.-J. Liang¹⁾*, C.-Y. Lien¹⁾, C.-F. Chen²⁾, Y. Kawai¹⁾, K.-F. Chiu¹⁾, J.-B. Shi²⁾, S.-Y. Lien³⁾, Y.-J. Tsai⁴⁾, T.-K. Lien⁵⁾, 1) Department of Materials Science & Engineering, Feng Chia University, Taiwan, 2) Departments of Electronic Engineering, Feng Chia University, Taiwan, 3) Da Yeh University, Taiwan, 4) ULVAC Automation Taiwan Inc., Taiwan, 5) Helius Power Corp., LTD, Taiwan

PP1-6p Relationship between the chemical composition and the crystallinity of hydroxyapatite thin films prepared by pulsed laser deposition, T. Hasegawa¹⁾*, Y. Hashimoto²⁾, H. Nishikawa³⁾, 1) Graduate school B.O.S.T., Kinki University, Japan, 2) Osaka Dental University, Japan, 3) B.O.S.T., Kinki University, Japan

Plasma Induced Process Technologies POSTER I

PI1-1p Properties of amorphous carbon layers grown on polyimide substrates using hot-filament cathode excited plasma, J. R. L. A. Cu¹⁾*, M. Wada²⁾, M. R. Vasquez Jr.¹⁾, 1) University of the Philippines, Philippines, 2) Doshisha University, Japan

PI1-2p Cell adhesion properties of plasma-modified polyimide surfaces, M. Jr. R. Vasquez¹⁾*, E. I. Prieto²⁾, M. Wada³⁾, 1) College of Engineering, University of the Philippines, Philippines, 2) College of Science, University of the Philippines, Philippines, 3) Doshisha University, Japan

PI1-3p Role of low-energy ion irradiation in the formation of aluminum germanate layer on germanium substrate by radical-enhanced atomic layer deposition, T. Yokohira¹⁾, K. Yanachi¹⁾, D. Yamada¹⁾*, C. Yamamoto²⁾, B. Yoo²⁾, J. Yamanaka³⁾, T. Sato²⁾, T. Takamatsu⁴⁾, H. Okamoto⁵⁾, Y. Fukuda¹⁾, 1) Tokyo University of Science, Japan, 2) University of Yamanashi, Japan, 3) University of Yamanashi, Japan, 4) SST Inc., Japan, 5) Hirosaki University, Japan

PI1-4p Modification of electrical properties of zinc oxide by hydrogen plasma treatment, K. Abe*, H. Itoh, Nagoya Institute of Technology, Japan

Thin Films POSTER I

TF1-1p Mechanical properties and tribological performance of CrWN/TiSiN multilayered coatings, Y. Y. Chang*, W. T. Chiu, J. W. You, J. C. Li, National Formosa University, Taiwan

TF1-2p Photocatalytic activity of bipolar pulsed magnetron sputter deposited TiO₂/WO₃ thin films, T. N. Lin¹⁾*, Y. H. Lin²⁾, C. T. Lee²⁾, K. W. Weng²⁾, 1) Institute of Nuclear Energy Research, Taiwan, 2) National Quemoy University, Taiwan (No Show)

TF1-3p XPS for the analysis of amorphous chalcogenides-based photosensitive thin films, P. Nemec¹⁾*, C. Cardinaud²⁾, R. Boidin¹⁾, M. Olivier¹⁾, V. Nazabal¹⁾, 1) University of Pardubice, Czech Republic, 2) Université de Nantes, France

TF1-4p Enhanced magnetic, ferroelectric and leakage current properties of Sm substituted bismuth ferrite thin films, H.-Z. Chen¹⁾*, M.-C. Kao¹⁾, S.-L. Young¹⁾, D.-Y. Lin²⁾, B.-F. Lin²⁾, J.-D. Hwang³⁾, J.-B. Shi⁴⁾, J.-L. Chiang⁵⁾, P.-Y. Chen¹⁾, 1) Hsiuping University of Science and Technology, Taiwan, 2) National Changhua University of Education, Taiwan, 3) National Chiayi University, Taiwan, 4) Feng Chia University, Taiwan, 5) Toko University, Taiwan

TF1-5p The structural, electrical and magnetic properties of multiferroic/ferroelectric bilayer thin films, M.-C. Kao¹⁾, S.-L. Young¹⁾*, H.-Z. Chen¹⁾, J.-D. Hwang²⁾, J.-B. Shi³⁾, J.-L. Chiang⁴⁾, D.-Y. Lin⁵⁾, P.-Y. Chen¹⁾, B.-F. Lin⁵⁾, 1) Hsiuping University of Science and Technology, Taiwan, 2) National Chiayi University, Taiwan, 3) Feng Chia University, Taiwan, 4) Toko University, Taiwan, 5) National Changhua University of Education, Taiwan

TF1-6p Resistive memory properties of an electrochemical SiO₂-based device without an active electrode, C.-Y. Liu¹⁾, K.-C. Chiang¹⁾*, C.-H. Lai²⁾, 1) National Kaohsiung University of Applied Sciences, Taiwan, 2) National United University, Taiwan

TF1-7p Influence of external mechanical stress on the SiO₂-based resistive memory, C.-Y. Liu, Y.-X. Zhang, S.-J. Tai*, Z.-X. Zhou, M.-X. Wu, National Kaohsiung University of Applied Sciences, Taiwan

TF1-8p Study on the crystallization of amorphous IGZO thin films deposited by dc magnetron sputtering, A. Suko¹⁾*, J. Jia¹⁾, S. Nakamura¹⁾, F. Utsuno²⁾, E. Kawashima²⁾, K. Yano²⁾, Y. Shigesato¹⁾, 1) Aoyama Gakuin University, Japan, 2) Idemitsu Kosan Co., Ltd., Japan

TF1-9p Influence of Zn-Sn ratio on optical property and microstructure of Zn-Sn-O films deposited by magnetron sputtering, Y. Nakanishi*, K. Kato, M. Yonekura, Central Glass Co., Ltd., Japan

TF1-10p The electrical conduction mechanisms and characteristics of the Ni-Cr thin films, N.-C. Chuang¹⁾*, J.-T. Lin¹⁾, H.-R. Chen²⁾, 1) National Sun Yat-Sen University, Taiwan, 2) Walsin Technology Corporation, Taiwan (No Show)

TF1-11p Transparent conductive ITO and IZO films deposited by reactive sputtering using alloy targets with the plasma emission feedback system, Y. Miyazaki¹⁾*, E. Maruyama¹⁾, J. Jia¹⁾, H. Machinaga²⁾, T. Miyazaki²⁾, Y. Shigesato¹⁾, 1) Aoyama Gakuin University, Japan, 2) Nitto Denko Corporation, Japan

TF1-12p Properties of TiAlSiN films deposited with hybrid process of cathodic arc deposition and magnetron sputtering, J. H. Yang*, S.-H. Kim, M.-A Song, J.-H. Jung, J.-I. Jeong, RIST, Korea

TF1-13p Effect of fluorocarbon and zinc oxide thin films prepared by an r.f. sputtering on heat reflection, N. Nishiyama*, K. Horikoshi, S. Iwamori, Tokai University, Japan

TF1-14p High transparency and low resistance of ITO/Ag/ITO stacked layer by sputtering, C. H. Peng¹⁾, P. S. Chen¹⁾*, G.-W. Lin^2,3), S. W. Lee³⁾, 1) Minghsin University of Science and Technology, Taiwan, 2) National Central University Institute of Material Science and Engineering, Taiwan, 3) Chung-Shan Institute of Science and Technology, Taiwan

Applications POSTER I

AP1-8p Metallic glass coating for non-sticky medical needles, Y. Tanatsugu^1,2)*, C.-C. Yu¹⁾, C.-L. Li¹⁾, J. P. Chu¹⁾, M. Yasuzawa²⁾, 1) National Taiwan University of Science and Technology, Taiwan, 2) The University of Tokushima, Japan

AP1-9p Resistive switching characteristics of amorphous oxide film for next-generation nonvolatile memory applications, T.-Y. Wang¹⁾*, C.-C. Yu¹⁾, C.-M. Lee¹⁾, W. Diyatmika¹⁾, J. P. Chu¹⁾, S. F. Wang²⁾, 1) National Taiwan University of Science and Technology, Taiwan, 2) National Taipei University of Technology, Taiwan

AP1-10p An Advanced sterilization system using active oxygen species (AOS) from oxygen gas generated by ultraviolet Irradiation, K. Yoshino¹⁾*, S. Iwamori²⁾, 1) Iwasaki Electric Co., Ltd., Japan, 2) Tokai University, Japan

AP1-11p Magnetic-field induced change in photovoltaic responses in ferromagnetic Bi(Fe_1-xCo_x)O₃, Y.-S. Chiang¹⁾*, J.-C. Hsu²⁾, Y.-C. Chen²⁾, 1) Graduate Institute of Applied Science and engineering, Fu Jen Catholic University, Taiwan, 2) Department of Physics, Fu Jen Catholic University, Taiwan (No Show)

AP1-12p Compositional Study on MoTi alloy for application to wet-etching process, Y. K. Kim*, M. G. Yun, C. H. Ahn, S. W. Cho, H. K. Cho, Sungkyunkwan University(SKKU), Korea (withdrawal)

Thursday 9 Oral Session

Thin Films I 9:00-12:00

09:00 TF2-1 High power impulse magnetron sputtering: from surface science to surface engineering, K. Sarakinos*, Linköping University, Sweden (invited)

09:40 TF2-2 Dielectric properties of epitaxial hydroxyapatite thin films grown on Al₂O₃(0001) substrate, H. Nishikawa*, Kinki University, Japan

10:00 TF2-3 Influence of ion bombardment on microstructures and optoelectronic properties of p-type nickel oxide films, S.-C. Chen¹⁾*, P.-J. Chen¹⁾*, T.-Y. Kuo²⁾, C.-K. Wen¹⁾, H.-C. Lin²⁾, 1) Ming Chi University of Technology, Taiwan, 2) National Taiwan University, Taiwan

10:20 TF2-4 NiO/GaN heterojunction diodes deposited by magnetron reactive sputtering, L. Li¹⁾, Y. Itai¹⁾, X. Wang²⁾, J.-P. Ao¹⁾*, 1) Institute of Technology and Science, The University of Tokushima, Japan, 2) Department of Chemical Science and Technology, the University of Tokushima, Japan

10:40 TF2-5 Improving optical thin film properties and deposition rate by reactive magnetron sputtering, K. Juškevičius^1,3)*, A. Subačius²⁾, G. Abromavičius^1,3), M. Audronis²⁾, R. Drazdys^1,3), A. Matthews²⁾, 1) Center for Physical Sciences and Technology, Lithuania, 2) The University of Sheffield, UK, 3) Optida Co. Ltd., Lithuania

11:00 TF2-6 Experimental design approach for deposition optimization of rf sputtered chalcogenide thin films devoted to environmental optical bio-chemical sensors, V. Nazabal¹⁾*, E. Baudet¹⁾, M. Sergent²⁾, P. Nemec³⁾, E. Rinnert⁴⁾, K. Michel⁵⁾, B. Bureau¹⁾, 1) Université de Rennes 1, France, 2) Aix Marseille Université, France, 3) University of Pardubice, Czech Republic, 4) IFREMER, France, 5) BRGM, France

11:20 TF2-7 Resistive switching characteristics in forming-free amorphous metal oxide thin films, S.-F. Wang¹⁾, J. P. Chu²⁾*, P.-H. Li¹⁾, 1) National Taipei University of Technology, Taiwan, 2) National Taiwan University of Science and Technology, Taiwan (invited)

Lunch Break 12:00-13:00

Thin Films II 13:00-13:20

13:00 TF2-8 Properties of Al-Si-N coatings prepared by pulsed magnetron sputtering, J. Musil^1,2), G. Remnev¹⁾*, V. Legostaev¹⁾, V. Uglov^1,3), A. Lebedynskiy¹⁾, A. Lauk¹⁾, J. Prochazka²⁾, E. Smolianskiy¹⁾, 1) National Research Tomsk Polytechnic University, Russia, 2) University of West Bohemia, Czech Republic, 3) Belarusian State University, Belarus (No Show)

Plasma Processes 13:20-14:40

13:20 PP2-1 Radial line slot antenna microwave plasma source mediated conformal doping of non-planar silicon structures, H. Ueda¹⁾*, P. Ventzek²⁾, Y. Kobayashi¹⁾, M. Oka¹⁾, Y. Sugimoto¹⁾, T. Nozawa¹⁾, S. Kawakami¹⁾, 1) Tokyo Electron Ltd, Technology Center Sendai, Japan, 2) Tokyo Electron America, Inc., USA (invited)

14:00 PP2-2 Filtered cathodic vacuum Arc: The evolution beyond coating materials, C. W. Tan¹⁾, A. A. Maurice¹⁾, X. Shi²⁾, B. K. Tay³⁾*, 1) Nanyang Technological University, NOVITAS, Nanoelectronics 1, Singapore, 2) Nanofilm Technologies International Pte Ltd (NTI), Singapore, 3) Nanyang Technological University, College of Engineering, Singapore, (invited)

14:40 PP2-3 Measuring plasma parameters in electrical discharges using rf current and voltage measurements, D. Gahan, M. B. Hopkins*, Impedans Ltd., Ireland

Coffee Break 15:00-15:20

Fundamentals of Sputtering and Plasma 15:20-16:40

15:20 FS2-1 Model calculation of time-dependent changes in getter-pump pumping speed in reactive sputtering, E. Kusano*, Kanazawa Institute of Technology, Japan

15:40 FS2-2 Visualizing the physical phenomena in high-power impulse magnetron sputtering by optical diagnostics, N. Britun^1)*, M. Palmucci¹⁾, S. Konstantinidis¹⁾, R. Snyders^1,2), 1) University of Mons, Belgium, 2) Materia Nova research center, Belgium

16:00 FS2-3 Next generation active layers for AM-TFT display backplanes deposited by static large area PVD technology with rotary cathode technology, M. Bender*, Applied Materials GmbH & Co. KG, Germany

16:20 FS2-4 Recent development in HIPIMS technology for sputtering thin films of oxides, nitrides and DLC., R. Chistyakov*, B. Abraham, Zpulser LLC, USA

Thursday 9 Poster Session 17:00-18:40

Fundamentals of Sputtering and Plasma POSTER

FS2-5p Revisit to zone structure model by observing the relationship between normalized deposition temperature and film structure and properties in sputter deposition of the group 4 metals, Y. Bohya*, K. Akinaga, E. Kusano, Kanazawa Institute of Technology, Japan

FS2-6p Modeling on discharge mechanism of DC-magnetron, S. Ogata¹⁾*, H. Sugawara²⁾, 1) Atelier Modeling, Japan, 2) Hokkaido University, Japan

FS2-7p Numerical simulation of low pressure inductively coupled plasma sources for nanostructured carbon deposition, K. Okada*, NIMS, Japan

FS2-8p Sputtering process of tungsten material under noble gas irradiation by binary-collision-approximation-based simulation, S. Saito¹⁾*, M. Tokitani²⁾, H. Nakamura²⁾, 1) National Institute of Technology, Kushiro College, Japan, 2) National Institute for Fusion Science, Japan

FS2-9p Visualization of quality of atmospheric plasma jet, M. Kiuchi^1,2)*, K. Honjo¹⁾, T. Ito²⁾, S. Hamaguchi²⁾, 1) AIST, Japan, 2) Osaka University, Japan

Plasma Processes POSTER II

PP2-4p Improvement of field emission properties of carbon nanotubes using plasma treatment and silicon coating, W.-C. Shih*, C.-P. Huang, M.-S. Wu, Tatung University, Taiwan (No Show)

PP2-5p Comparison of photoemission-assisted plasma discharge characteristics between n-type and p-type diamond surfaces, M. Kawata, A. Ohno, S. Ogawa*, Y. Takakuwa, Tohoku University, Japan

PP2-6p Characteristics of a large area VHF plasma produced by a narrow gap discharge, C.-Y. Lien¹⁾, C.-F. Chen²⁾*, Y. Kawai¹⁾, K.-F. Chiu¹⁾, J.-B. Shi²⁾, S.-Y. Lien³⁾, C.-J. Liang¹⁾, Y.-J. Tsai⁴⁾, T.-K. Lien⁵⁾, 1) Department of Materials Science & Engineering, Feng Chia University, Taiwan, 2) Department of Electronic Engineering, Feng Chia University, Taiwan, 3) Da Yeh University, Taiwan, 4) ULVAC Automation Taiwan Inc., Taiwan, 5) Helius Power Corp., LTD, Taiwan

PP2-7p Non-thermal atmospheric-pressure helium plasma jet etched DLC film in ambient air, Y. Yasuoka¹⁾*, M. Kakuta¹⁾, J.-S. Oh^1,2), H. Furuta^1,2), A. Hatta^1,2), 1) Department of Electronic & Photonic Systems Engineering, Kochi University of Technology, Japan, 2) Center for Nanotechnology, Kochi University of Technology, Japan

PP2-8p Nitrogen- hydrogen rf-plasma nitriding of steel with different nitrogen gas partial pressures, A. Suzuki¹⁾*, S. Asahina²⁾, 1) AIST, Japan, 2) Shimane Institute for Industrial Technology, Japan

PP2-9p Sheet plasma device with microwave plasma cathode source, B. A. T. Suarez¹⁾*, H. Maeji¹⁾, T. Kasuya¹⁾, M. Sasao¹⁾, H. Ramos²⁾, M. Wada¹⁾, 1) Doshisha University, Japan, 2) University of the Philippines, Philippines

PP2-10p The study of LSM cathode material of SOFC by novel atmospheric pressure plasma jet process, H.-T. Huang*, Y.-L. Kuo, National Taiwan University of Science and Technology, Taiwan (withdrawal)

Thin Films POSTER II

TF2-9p Thermal stability and mechanical properties of TiVN/CrN multilayered coatings synthesized by cathodic arc deposition, Y. Y. Chang*, J. H. Chou, H. Chang, National Formosa University, Taiwan

TF2-10p Depositions of MoO_x thin films by pulse DC magnetron sputter method with various oxygen partial pressures, T.-N. Lin¹⁾*, Y.-H. Lin²⁾, C.-T. Lee²⁾, J. Chang³⁾, S.-Y. Yang³⁾, Y.-X. Zhao⁴⁾, K.-W. Weng²⁾, 1) The Institute of Nuclear Energy Research, Taiwan, 2) Department of Electronic Engineering, National Quemoy University, Taiwan, 3) Department of Applied English, National Quemoy University, Taiwan, 4) Department of Computer Science and Information Engineering, National Quemoy University, Taiwan

TF2-11p Oxygen cluster ion beam assisted deposition of aluminum oxide film, H. Ryuto*, T. Yakushiji, M. Takeuchi, G. H. Takaoka, Kyoto University, Japan

TF2-12p A sodium source via MoNa layer for three-stage evaporation of Cu(In,Ga)Se₂ solar cells, H.-H. Sung¹⁾*, S.-C. Liang²⁾, D.-C. Tsai¹⁾, Z.-C. Chang³⁾, F.-S. Shieu¹⁾, 1) National Chung Hsing University, Taiwan, 2) Chung-Shan Institute of Science and Technology, Taiwan, 3) National Chin-Yi University of Technology, Taiwan (withdrawal)>

TF2-13p Internal oxidation behavior of laminated Hf-Ru coatings, Y.-I Chen¹⁾, Y.-R. Huang¹⁾*, L.-C. Chang²⁾, 1) National Taiwan Ocean University, Taiwan, 2) Ming Chi University of Technology, Taiwan

TF2-14p Comparison study on diamond-like carbon films prepared by various methods, S. Nakao¹⁾*, T. Sonoda¹⁾, J. Choi²⁾, H. Yasui³⁾, T. Kimura⁴⁾, K. Azuma⁵⁾, 1) AIST, Japan, 2) The University of Tokyo, Japan, 3) Industrial Research Institute of Ishikawa, Japan, 4) Nagoya Institute of Technology, Japan, 5) University of Hyogo, Japan

TF2-15p Characteristics of TiN films by oblique angle deposition with applied bias using cathodic arc deposition, S.-H. Kim*, J.-H. Yang, M.-A Song, J.-H. Jung, J.-I. Jeong, RIST, Korea

TF2-16p Self-propagating exothermic reaction behavior of Ti/Si multilayer films, S. Inoue¹⁾*, S. Minamibata²⁾, K. Yoshiki¹⁾, T. Namazu¹⁾, 1) Dept. of Mechanical Engineering, University of Hyogo, Japan, 2) Graduate School student, University of Hyogo, Japan

TF2-17p Spectroscopic ellipsometry study of ZnO film doped various amount of aluminum by ion beam co-sputtering, J.-C. Hsu^1,2)*, Y.-S. Chiang²⁾, 1) Department of Physics, Fu Jen Catholic University, Taiwan, 2) Graduate Institute of Applied Science and Engineering, Fu Jen Catholic University, Taiwan.

TF2-18p Microstructural investigations of ion beam sputtered AlN thin films deposited in reactive nitrogen ion assistance mode at different substrate temperatures, N. Sharma*, S. Ilango, S. Dash, A. K. Tyagi, Indira Gandhi Center for Atomic Research, India (withdrawal)

TF2-19p Work function of hafnium nitride thin films prepared by radio frequency magnetron sputtering, Y. Gotoh*, S. Fujiwara, H. Tsuji, Kyoto University, Japan

TF2-20p Fabrication and characterization of the electrochromic tungsten trioxide thin film deposited by rf magnetron sputtering, C.-M. Lei¹⁾*, Y.-J. Luo¹⁾, C.-Y. Tai²⁾, 1) Chinese Culture University, Taiwan, 2) National Central University, Taiwan

Applications POSTER II

AP2-1p Liquid refractive index sensors based on thin-film coatings and lossy mode resonance effect, C.-L. Tien¹⁾*, W.-L. Zhong¹⁾, C.-K. Chang²⁾, B.-W. Lee¹⁾, 1) Feng Chia University, Taiwan, 2) Ph. D Program of Electrical and Communications Engineering, Feng Chia University, Taiwan

AP2-2p Modification of 316L stainless steel coating organic- siloxane film by cold plasma treatment and immobilized growth factor for biomedical applications, S.-C. Liao^1,2)*, H.-T. Tsai³⁾, J.-W. Lee^2,4), W.-L. Lin¹⁾, C.-P. Lin³⁾, 1) Institute of Biomedical Engineering, National Taiwan University, Taiwan, 2) Center Thin Film Technologic and Applications, Ming Chi University of Technology, Taiwan, 3) School of Dentistry, National Taiwan University, Taiwan, 4) Department of Materials Engineering, Ming Chi University of Technology, Taiwan

AP2-3p Epitaxial Co-rich Co-Pt films with columnar grains and perpendicular magnetic anisotropy at ambient temperature, S.-C. Chen¹⁾, P.-J. Chen¹⁾*, C.-K. Wen¹⁾, T.-H. Sun²⁾, C.-M. Wang³⁾, P.-C. Kuo³⁾, 1) Ming Chi University of Technology, Taiwan, 2) National Tsing Hua University, Taiwan, 3) National Taiwan University, Taiwan

AP2-4p Effect of Ge layer thickness on the crystallization mechanism and recording performance of Ge/NiGe bilayer applied for Blu-Ray disc, C.-W. M. Lee¹⁾, H.-C. Wu¹⁾, C.-K. Wen¹⁾, S.-L. Ou²⁾, Y.-C. Lin¹⁾, S.-C. Chen¹⁾*, 1) Ming Chi University of Technology, Taiwan, 2) National Taiwan University, Taiwan

AP2-5p Effect of tungsten current and annealing temperature on structural, electrical and mechanical properties of Ti-W-N thin films, P. Homhuan¹⁾*, J. Pongsopa²⁾, K. Honglertkongsakul³⁾, 1) Phranakhon Si Ayutthaya Rajabhat University, Thailand, 2) Suandusit Rajabhat University, Thailand, 3) Burapha University, Thailand

AP2-6p Linear motion guide with solid lubricant, H. Yanagida*, THK CO., LTD., Japan (No Show)

AP2-7p Surface erosion and temperature change of beryllium plate in the first wall of fusion devices, Y. N. Nejoh¹⁾*, S. Goto²⁾, K. Tabata²⁾, D. Wakabayashi²⁾, 1) Graduate School of Engineering, Hachinohe Institute of Technology, Japan, 2) Department of Electrical and Electronic Systems, Hachinohe Institute of Technology, Japan

AP2-8p Coating of magnesium alloy with Bi-layered Si-DLC/aluminum oxide thin films for improving corrosion resistance, T. Sonoda*, S. Nakao, M. Ikeyama, AIST, Japan

AP2-9p Sputtering power effects on the microstructure of TiVCr alloy thin films, D.-C. Tsai*, F.-S. Shieu, National Chung Hsing University, Taiwan

AP2-10p Amorphous InGaZnO thin film transistor for high photo-response and fast recovery, Y. K. Kim*, M. G. Yun, C. H. Ahn, S. W. Cho, H. K. Cho, Sungkyunkwan University(SKKU), Korea (withdrawal)

AP2-11p Thermal stability and chemical inertness of Cr-W-N coatings in glass molding, Y.-I Chen¹⁾, Y.-R. Cheng¹⁾*, J.-W. Lee²⁾, 1) National Taiwan Ocean University, Taiwan, 2) Ming Chi University of Technology, Taiwan

AP2-12p Characteristics of polymer materials exposed to active oxygen species via UV light irradiation, K. Oya*, S. Inoue, K. Hosoya, S. Iwamori, Tokai University, Japan

Others POSTER

OT2-1p A nobel sterilization method using ultraviolet photochemical reactions based on nitrous oxide (N₂O) gas, H. Matsumoto¹⁾*, Y. Ohnishi²⁾, I. Tatsuyuki¹⁾, A. Kosasa¹⁾, S. Kinoshita³⁾, J. Miyagawa⁴⁾, S. Iwamori²⁾, 1) Iwasaki Electric Co.,Ltd., Japan, 2) Tokai University, Japan, 3) EYE Electron Beam Co., Ltd., Japan, 4) Sakura Seiki Co., Ltd., Japan

Friday 10 Oral Session

Others 9:00-9:40

09:00 OT3-1 Feasibility of inorganic large-area devices prepared by pulsed sputtering, H. Fujioka^1,2)*, K. Ueno¹⁾, A. Kobayashi¹⁾, J. Ohta¹⁾, 1) The University of Tokyo, Japan, 2) ACCEL, JST, Japan (invited)

Plasma Induced Process Technologies 9:40-11:00

09:40 PI3-1 Effects of excess energy on supersaturated Fe-IIIB thin films formation by ion-plating process, A. Sakai¹⁾*, C. Niyomwaitaya¹⁾, M. Amano¹⁾, S. Sakano²⁾, Y. Matsumura¹⁾, 1) Course of Applied Science, Graduate School of Engineering, Tokai University, Japan, 2) Department of Nuclear Engineering, Tokai University, Japan

10:00 PI3-2 Plasma modification of spray-deposited graphite powders, M. Jr. R. Vasquez¹⁾*, J. R. L. A. Cu¹⁾, J. G. Chan¹⁾, M. Wada²⁾, 1) University of the Philippines, Philippines, 2) Doshisha University, Japan

10:20 PI3-3 High-κ ZrHfO crystallization Induced by ZrN cap using high power impulse magnetron sputtering for metal-gate MIS applications, J.-R. Tsai¹⁾, P.-C. Juan²⁾, G.-C. Lin¹⁾, T.-C. Ho²⁾*, 1) Asia University, Taiwan, 2) Ming Chi University of Technology, Taiwan

10:40 PI3-4 Creating self-healing moisture barriers by vacuum plasmas, V. B.-Gonzalez¹⁾, B. Daniel¹⁾, J. Brindley¹⁾, H. Li¹⁾, D. Monaghan¹⁾*, I. Fernandez²⁾, A. Wennberg²⁾, 1) Gencoa, UK, 2) Nano4Energy, Spain

Micro and Nano Technologies 11:00-12:00

11:00 MN3-1 Synthesis of functional nanomaterials by pulsed plasma, Z. Abdullaeva*, E. Omurzak, M. Tsushida, T. Mashimo, Kumamoto University, Japan

11:20 MN3-2 Importance of plasma conditions for vertically aligned carbon nanowalls synthesis, L. Bónová, J. Bohovičová, J. Halanda, M. Muška, M. Meško*, Institute for Research of Progressive Technologies, Slovak Republic

11:40 MN3-3 Ion incident energy dependence for Cu surface smoothing using Ar⁺ ions generated by photoemission-assisted plasma, S. Ajia*, Y. Kotanigawa, Y. Ohtomo, S. Ogawa, Y. Takakuwa, Tohoku University, Japan

Lunch Break 12:00-13:00

Thin Films III 13:00-15:00

13:00 TF3-1 Influence of growth defects in PVD hard coating on their wear, corrosion and oxidation resistance, P. Panjan*, A. Drnovšek, Jožef Stefan Institute, Slovenia (invited)

13:40 TF3-2 Spectroscopic ellipsometry for characterization of multi-layer optical coatings, J. N Hilfiker*, G. Pribil, J. Vanderslice, J. A. Woollam, J. A. Woollam Co., USA

14:00 TF3-3 Various oxide films with high performances deposited by reactive sputtering, Y. Shigesato*, J. Jia, Aoyama Gakuin University, Japan (invited)

14:40 TF3-4 Sputter coating of plastic film: Strategies for reduction of substrate heat load, H. Proehl, C. Perplies, J. Struempfel, Von Ardenne, Germany

Friday 10 Poster Session 15:20-16:40

Sputtering Processes POSTER II

SP3-1p Effects of gas-added water cluster ion irradiation on metal surfaces, H. Ryuto*, H. Kobayashi, M. Yamaoka, M. Takeuchi, G. H. Takaoka, Kyoto University, Japan (withdrawal)

SP3-2p High number density deposition of iron catalyst nanoparticles onto SiO₂ substrate by interval sputtering method, H. Koji¹⁾*, T. Hongo¹⁾, H. Furuta^1,2), A. Hatta^1,2), 1) Kochi University of Technology, Japan, 2) Center for Nanotechnology, Kochi University of Technology, Japan

SP3-3p Properties of CrSiN coatings fabricated by a hybrid coating system with high power impulse magnetron sputtering and radio frequency sputtering, C.-Y. Cheng¹⁾*, J.-W. Lee^1,2), 1) Department of Materials Engineering, Ming Chi University of Technology, Taiwan, 2) Center for Thin Films Technologies and Applications, Ming Chi University of Technology, Taiwan

SP3-4p Effect of ion irradiation on structural, electrical and optical properties of Al doped ZnO films prepared using RF magnetron sputtering, Y. Ichino*, H. Toyota, Hiroshima Institute of Technology, Japan

SP3-5p Appearance of large crystalline domains in VO₂ films on Al₂O₃ (001) substrates by rf biased sputtering and its effect on the phase transition properties, N. H. Azhan¹⁾*, K. Okimura¹⁾, K. Su¹⁾, M. Zaghrioui²⁾, J. Sakai²⁾, 1) Tokai University, Japan, 2) GREMAN, University, France

SP3-6p Characteristics of tantalum oxide thin films prepared by reactive magnetron sputtering, T. Souma*, I. Takano, Kogakuin university, Japan

SP3-7p Stress behavior of Cu₂ZnSnS₄ thin-film by using different DC-pulse conditions in magnetron sputtering process, J.-R. Tsai¹⁾, P.-C. Juan²⁾, T.-P. Shen²⁾, H.-Y. Chu²⁾*, 1) Asia University, Taiwan, 2) Ming Chi University of Technology, Taiwan

SP3-8p Development of epitaxial AlN buffer layer for LEDs by sputtering method, T. Tsuyuki*, K. Tsukagoshi, K. Fuse, I. Kimura, ULVAC, Inc., Japan

SP3-9p Influence of reactive gas additives on surface morphology evolution of stainless steel substrates undergoing Ar ion sputtering process, A. G. Remnev¹⁾*, K. Uemura¹⁾, K. Nagato²⁾, 1) ITAC.LTD, Japan, 2) The University of Tokyo, Japan

SP3-10p Fine structure of Mo films deposited by triode high power pulsed magnetron sputtering on low temperature substrates, K. Kimura*, T. Narita, N. Itamura, T. Nakano, Seikei University, Japan

Plasma Induced Process Technologies POSTER II

PI3-5p Investigation of copper and copper oxide thin films deposited on FTO glass substrate using a hot cathode DC source plasma system, J. R. L. A. Cu¹⁾*, M. Wada²⁾, M. R. Vasquez Jr.¹⁾, 1) University of the Philippines, Philippines, 2) Doshisha University, Japan

PI3-6p Argon plasma treatment of ZnO thin films deposited via spray pyrolysis, M. F. Ramos¹⁾, A. M. Amo¹⁾, H. J. Ramos²⁾, M. Wada³⁾, M. R. Vasquez Jr.⁴⁾*, 1) Materials Science and Engineering Program, College of Science, University of the Philippines, Philippines, 2) National Institute of Physics, College of Science, University of the Philippines, Philippines, 3) Doshisha University, Japan, 4) College of Engineering, University of the Philippines, Philippines

PI3-7p Low-damage ammonia plasma treatment on nonvolatile memory with chemically-synthesized gold nanoparticles, K.-P. Chang¹⁾*, C.-H. Liao¹⁾, J.-C. Wang¹⁾, C.-S. Lai¹⁾, R.-D. Chang¹⁾, L.-C. Chang²⁾, 1) Chang Gung University, Taiwan, 2) Ming Chi University of Technology, Taiwan

PI3-8p Preparation and characterization of crednerite-CuMnO₂ thin films by atmospheric pressure plasma annealing, H.-Y. Chen*, Y.-C. Lin, National Kaohsiung University of Applied Sciences, Taiwan (withdrawal)

PI3-9p Plasma modification of spray-deposited restacked few layered graphene using nitrogen plasma, J. G. Chan¹⁾*, E. P. Enriquez²⁾, M. Wada³⁾, M. R. Vasquez Jr.¹⁾, 1) University of the Philippines, Philippines, 2) Ateneo de Manila University, Philippines, 3) Doshisha University, Japan

Thin Films POSTER III

TF3-4p Pulsed laser deposited alumina thin films, R. Boidin¹⁾, T. Halenkovic¹⁾, V. Nazabal¹⁾, L. Benes²⁾, P. Nemec¹⁾*, 1) Faculty of Chemical Technology, University of Pardubice, Czech Republic, 2) Joint Laboratory of Solid State Chemistry of the Institute of Macromolecular Chemistry of AS CR and University of Pardubice, Czech Republic

TF3-5p The optical, electrical, mechanical and structural properties of sputtering Ga-doped ZnO thin films by low powers at room temperature, C.-L. Tien¹⁾*, T.-Y. Tsai¹⁾, B.-H. Chen¹⁾, M.-C. Liu²⁾, 1) Feng Chia University, Taiwan., 2) Industrial Technology Research Institute,Taiwan.

TF3-6p Influences of iron contents on the microstructure, mechanical and electrochemical properties of ternary Zr-Fe-Nb thin film metallic glasses, T.-Y. Lin¹⁾*, J.-W. Lee^1,2,3), B.-S. Lou⁴⁾, 1) Department of Materials Engineering, Ming Chi University of Technology, Taiwan, 2) Center for Thin Films Technologies and Applications, Ming Chi University of Technology, Taiwan, 3) Department of Electronic Engineering, Chung Gung University, Taiwan, 4) Chemistry Division, Center for General Education, Chang Gung University, Taiwan

TF3-7p Effect of substrate position on crystal orientation of tungsten films prepared by RF magnetron sputter deposition, H. Fujiwara*, H. Tsuji, Y. Gotoh, Kyoto University, Japan

TF3-8p UV raman study of hydrogenated amorphous carbon films, J. Choi¹⁾*, H. Shimozono¹⁾, S. Nakao²⁾, H. Yasui³⁾, 1) The University of Tokyo, Japan, 2) AIST, Japan, 3) Industrial Research Institute of Ishikawa, Japan

TF3-9p Effect of post-annealing for hydrogenated AZO films using magnetron DC sputtering, N.-F. Shih¹⁾*, Y.-C. Tang¹⁾, S.-L. Young¹⁾, G.-M. Huang²⁾, S.-C. Yeh²⁾, C.-Y. Kung²⁾, 1) Hsiuping University of Science and Technology, Taiwan, 2) National Chung-Hsing University, Taiwan

TF3-10p Influence of Al layer thickness on the structural, optical and electrical properties of AZO/Al/AZO tri-layer films, C.-H. Chu¹⁾*, H.-W. Wu²⁾, W.-H. Tsai²⁾, J.-L. Huang^1,3,4), 1) Department of Materials Science and Engineering, National Cheng Kung University, Taiwan., 2) Kun Shan University, Taiwan., 3) National University of Kaohsiung, Taiwan., 4) Research Center for Energy Technology and Strategy, National Cheng Kung University, Taiwan.

TF3-11p Mechanical and electrical characteristics of metal doped DLC films prepared by N₂⁺ ion beam assisted deposition, T. Inoue*, I. Takano, Kogakuin university, Japan

TF3-12p Residual stress and bending strength of ZnO films deposited on polyimide sheet by rf sputtering system, K. Kusaka¹⁾*, Y. Maruoka²⁾, T. Matsue³⁾, 1) Faculty and School Engineering, The University of Tokushima, Japan, 2) Intelligent Structures and Mechanics Systems Engineering, The University of Tokushima, Japan, 3) National Institute of Technology, NIIHAMA College, Japan

TF3-13p Synthesis and advances for thermochromic vanadium dioxide films as RF magnetron sputtering, H. J. Seo¹⁾*, K.-H. Hwang^1,2), S. H. Nam²⁾, J.-H. Boo¹⁾*, J.-H. Yu¹⁾, 1) Chemistry, Sungkyunkwan University, Korea, 2) Institute of Basic Science, Sungkyunkwan University, Korea

TF3-14p Effect of pulsed DC frequency and power density on electrical property of conductive carbon films synthesis by magnetron sputtering, J. X. Piao*, J. S. Lee, S. B. Jin, B.B. Sahu, M. Kumar, J. G. Han, Sungkyunkwan University, Korea

TF3-15p Transparent conducting Al and F co-doped ZnO thin films prepared by rf magnetron sputtering, F.-H. Wang*, C.-L. Chang, National Chung-Hsing University, Taiwan

Micro and Nano Technologies POSTER

MN3-4p Au-Fe₃O₄ nanoparticles by pulsed plasma in liquid: Structure, morphology and cytotoxicity, Z. Kelgenbaeva¹⁾*, E. Omurzak²⁾, T. Mashimo³⁾, 1) Graduate School of Science and Technology, Kumamoto University, Japan, 2) Priority Organization for Innovation and Excellence, Kumamoto University, Japan., 3) Institute of Pulsed Power Science, Kumamoto University, Japan

MN3-5p Performance optimization of double-sputtered gadolinium oxide nanocrystal memories with different stacked film thicknesses, Y.-P. Chiang*, K.-P. Chang, J.-C. Wang, Chang Gung University, Taiwan

MN3-6p Discharge breakdown characteristics of carbon nanotube thin film electrode, Y. Komatsu*, H. Sato, Mie University, Japan

MN3-7p Preparation of catalyst film for efficient growth of carbon nanotubes filled with ferromagnetic metal, E. Tamaki*, H. Sato, N. Kubonaka, Y. Fujiwara, Mie University, Japan

MN3-8p High frequency self-oscillations in VO₂ based out-of-plane device structure, M. S. Mian*, K. Okimura, Tokai University, Japan

MN3-9p Catalyst-dependent growth of graphene by chemical vapor deposition method using nozzle gas injection, Y. Matsuura*, H. Sato, H. Miyake, K. Hiramatsu, Mie University, Japan

MN3-10p Composition control of FePt nanoparticles in carbon nanotubes, Y. Fujiwara¹⁾*, R. Muta¹⁾, T. Maeda¹⁾, H. Sato¹⁾, K. Maeda¹⁾, M. Jimbo²⁾, T. Kobayashi¹⁾, 1) Mie University, Japan, 2) Daido University, Japan

MN3-11p Interaction of polyatomic carbon ions with Si surface, M. Takeuchi¹⁾*, K. Hayashi¹⁾, H. Ryuto¹⁾, G. H. Takaoka¹⁾, T. Nagayama²⁾, K. Matsuda²⁾, 1) Kyoto University, Japan, 2) Nissin Ion Equipment, Japan

MN3-12p Temperature effect on the microstructure, optical and photoelectrochemical characteristics of Fe₂O₃ resulted from Fe-sputtered films through electrochemical etching in F-containing ethylene glycol solution, J.-C. Lin¹⁾*, M.-C. Huang¹⁾, C.-C. Wu²⁾, W.-S. Chang²⁾, 1) National Central University, Taiwan, 2) Industrial Technology Research Institute, Taiwan

MN3-13p Synthesis and photocatalytic activity of ZnO-sulfides hybrids through sputtering deposited sulfides ultra-thin films onto ZnO nanostructures, Y.-C. Liang*, C.-C. Chung, National Taiwan Ocean University, Taiwan (No Show)

MN3-14p Fabrication of spindt emitter cathode using high power pulsed magnetron sputtering with controlled plasma potential, T. Narita¹⁾*, K. Kimura¹⁾, N. Itamura¹⁾, T. Nakano¹⁾, M. Nagao²⁾, H. Ohsaki²⁾, B. Masaoka²⁾, 1) Seikei University, Japan, 2) AIST, Japan

Closing Remarks

Poster Award Ceremony

Closing Remark Yasusei Yamada, Vice Chair, ISSP2015 committee, AIST, Japan

Contact to: ISSP2015 Office (Contact Information)